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SiR470DP
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
40
38
- 6.7
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1.0
2.5
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 40 V, V GS = 0 V
V DS = 40 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
30
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 20 A
V GS = 4.5 V, I D = 20 A
V DS = 15 V, I D = 20 A
0.0019
0.0022
190
0.0023
0.00265
Ω
S
Dynamic
b
Input Capacitance
C iss
5660
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 20 V, V GS = 0 V, f = 1 MHz
720
327
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 20 V, V GS = 10 V, I D = 20 A
V DS = 20 V, V GS = 4.5 V, I D = 20 A
102
45.5
13.8
155
70
nC
Gate-Drain Charge
Q gd
14.4
Gate Resistance
R g
f = 1 MHz
0.2
1.0
2
Ω
Turn-On Delay Time
t d(on)
16
30
Rise Time
Turn-Off Delay Time
t r
t d(off)
V DD = 20 V, R L = 2 Ω
I D ? 10 A, V GEN = 10 V, R g = 1 Ω
11
50
20
80
Fall Time
Turn-On Delay Time
t f
t d(on)
9
40
18
75
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 20 V, R L = 2 Ω
I D ? 10 A, V GEN = 4.5 V, R g = 1 Ω
31
85
39
60
150
75
Drain-Source Body Diode Characteristics
Pulse Diode Forward Current
Continuous Source-Drain Diode Current
a
I S
I SM
T C = 25 °C
60
100
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 5 A
I F = 10 A, dI/dt = 100 A/μs, T J = 25 °C
0.73
39
53
24
15
1.1
75
105
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68899
S-82295-Rev. A, 22-Sep-08
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